更新时间：07-01 （飞舞的丝带）提供原创文章
摘要：氮化铜薄膜是一种亚稳半导体材料，具有特殊的反三氧化铼(ReO3)结构的3d型过渡金属氧化物，即晶体中的铜原子未能紧密占据(111)面的密堆积位置，因此可以通过掺杂，如将其它原子(如铜、钯等原子)填充至晶体空位，使薄膜的电学、光学等性质发生极大的变化。此性质使得氮化铜薄膜材料作为一种可被应用于光存储器件和高速集成电路中的新型薄膜材料，近来广受人们注意。
本文采用直流磁控溅射法，在玻璃基底制备氮化铜薄膜。研究氮气分压和溅射功率对薄膜的微观结构、表面形貌、光学等基本特性的影响。
研究表明，增加氮气分量，使Cu3N从(111)择优晶向向(100)转换，晶化率也随之变化。并且，当功率为65W时，薄膜的沉积速率首先随氮气分压增大而变快，在氮气分压为60%时到达顶峰，继续增加氮气分压，沉积速率显著下降。增加溅射功率，可使制备的薄膜的XRD图谱的主峰从(100)向(111)转换，并且将导致薄膜厚度的增加和薄膜透射率的减小。
关键词：氮化铜薄膜；磁控溅射；氮分压；溅射功率
Abstract: Copper nitride thin film is one kind of metastable semiconductor materials, with special ReO3 structure, which means copper atoms have not occupied the close packing position of (111) surface. The electrical, optical and other properties of films can be changed dramatically by doping other atoms (such as copper, palladium) into vacation of crystal, rendering it possible to use Cu3N thin films on optical storage devices and high-speed integrated circuits. In this paper, copper nitride films are prepared on glass substrates by magnetron sputtering method. The influence of sputtering parameters is discussed and the properties of thin films prepared such as structure, morphology, optical properties are investigated. Results are obtained by AFM, XRD, UV-Vis-NIR spectrophotometer respectively and reasons of the differentiated properties are suggested in article.. While preparing Cu3N thin films, properties such as nitrogen partial pressure and sputtering power are changed in order to acquire samples with various properties. It turns out that the increase of nitrogen partial pressure leads to a preference of (100) crystal orientation instead of the original (111) orientation. Besides, the increment of nitrogen partial pressure changes the preference crystal orientation from (111) to (100), as well as the deposition rate of Cu3N film. The deposition rate reaches a peak while the nitrogen pressure partial is 60%. Also, the transmission rate of thin films goes down with the enhancement of sputtering power.
Key words: Copper Nitride thin film; magnetron sputtering; nitrogen pressure partial; sputtering power.